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Analysis reveals defects formation in irradiated semiconductors, suggesting techniques to enhance radiation hardness.
First results of investigation of defects formation efficiency in the previously irradiated semiconductors on an example of 47 MeV protons irradiated indium antimonide is given. The conclusion is made, that combination of preliminary irradiation with annealing is expected to become the basis of thermal-radiation technology of semiconductors radiation hardness increasing.
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Vikhliy et al. (2001) studied this question.
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