Transmission electron microscopy reveals defect changes in Cz silicon after neutron irradiation, indicating their effect on electrooptical properties.
The process of the defect formation, supporting oxide precipitation after neutron irradiation (1015 - 1019 n/cm2) and high temperature treatment (800 - 1000 °C) of Cz silicon wafers was investigated by the transmission electron microscopy. The influence of defect transformation on electrooptical silicon properties was studied.
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Starchyk et al. (2001) studied this question.
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