This method enables transfer-free growth of graphene on SiO2 substrates, suggesting easier removal of metal residue.
This study presents a straightforward method to allow transfer-free graphene growth on SiO2/Si substrates, with Mo serving as a sacrificial layer, which could be easily removed by simple air blowing. Such a route eliminates the need for chemical etching of metal catalysts. The resulting 2-inch graphene wafer shows electrical uniformity and minimal metal residue.
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Wei et al. (2025) studied this question.
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