Ambient-air, moisture-assisted annealing is widely used in fabricating perovskite solar cells (PSCs). However, the inherent sensitivity of perovskite intermediate-phase to moisture-due to fast and spontaneous intermolecular exchange reaction-requires strict control of ambient humidity and immediate thermal annealing treatment, raising manufacturing costs and causing fast nucleation of perovskite films. We report herein a self-buffered molecular migration strategy to slow down the intermolecular exchange reaction by introducing a n-butylammonium bromide shielding layer, which limits moisture diffusion into intermediate-phase film. This further endows the notably wide nucleation time and humidity windows for perovskite crystallization in ambient air. Consequently, the optimized 1.68 eV-bandgap n-i-p structured PSC reaches a record-high reverse-scan (RS) PCE of 22.09%. Furthermore, the versatility and applicability of as-proposed self-buffered molecular migration strategy are certified by employing various shielding materials and 1.53 eV-/1.77 eV-bandgap perovskite materials. The n-i-p structured PSCs based on 1.53 eV- and 1.77 eV-bandgap perovskite films achieve outstanding RS PCEs of 25.23% and 19.09%, respectively, both of which are beyond of the state-of-the-art ambient-air processed PSCs.
Yang et al. (Mon,) studied this question.
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