Crystallographic etching at high temperatures created β-Ga2O3 structures, suggesting new avenues for MEMS and power electronics.
β-Ga2O3/air-gap structures were fabricated on (001) substrates via crystallographic etching with HCl gas. Etching at 650 °C under an HCl partial pressure of 250 Pa resulted in a vertical etch rate of 0.10 μm/min on the (001) plane and a lateral etch rate of 0.70 μm/min along the < 010 > direction. This high orthogonal etching anisotropy enabled the formation of β-Ga2O3/air-gap structures – such as cantilevers and air bridges – without the need for wafer bonding or transfer processes. This straightforward technique, compatible with commonly used (001) substrates, holds promise for the integration of β-Ga2O3-based microelectromechanical systems (MEMS) and power electronic devices.
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Oshima et al. (2025) studied this question.
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