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This is a Numerical Simulations study.

September 5, 2025Journal of Applied PhysicsOpen Access

Physics, modeling, and benchmarking of ULTRARAM: A compound semiconductor-based memory device

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ULTRARAM exhibits high endurance and ultra-low switching energy per area, indicating its potential in advanced memory applications.
The device characteristics are derived from a physics-based model capturing charge dynamics, suggesting improved accuracy in predictions.
Numerical simulations with the Schrödinger equation reveal how minor variations in the quantum well affect memory performance, emphasizing design precision.
Array-level benchmarking underlines the promising advantages of this semiconductor technology over traditional memory solutions.

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Proposed a compact model that predicts device characteristics in non-volatile memory, highlighting the utility of ultraram.

Kumar et al. (2025) studied this question.

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