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September 5, 2025The Journal of Chemical Physics

Bandgap nonlinearity and composition-dependent bowing in α-(AlxGa1−x)2O3 epilayers

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Authors

XSXinyu SunWWWei WeiFRFangfang Ren

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Overview

This work demonstrates bandgap nonlinearity and composition-dependent bowing in α-(AlxGa1−x)2O3 epilayers, suggesting implications for Ga2O3 applications.

Key Points

  • The optical bandgap ranged from 5.28 to 7.22 eV, exhibiting significant nonlinearity with a bowing factor of 1.33 eV.
  • X-ray diffraction confirmed high crystalline quality of α-(AlxGa1−x)2O3 epilayers, adhering to Vegard’s law for lattice constants.
  • Analysis involved growth via laser molecular beam epitaxy on m-plane sapphire substrates, assessing surface roughness and rocking curve width.
  • These findings highlight potential for precise bandgap tuning in Ga2O3 for high-performance power electronics.

Cite This Study

Sun et al. (2025) studied this question.

synapsesocial.com/papers/68bb5f266d6d5674bcd02f53https://doi.org/10.1063/5.0287172
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Also Consider

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  1. 1Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga2O31974 · 208 citations
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  4. 4Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates2021 · 80 citations