Wafer-Scale Integration of Monolayer MoS₂ via Residue-Free Support Layer Etching and Angular Strain Suppression

Shi Wun Tong; Mingxi Chen; Xin Ju; J. W. Chai; Junyoung Kim; Jaewon Kim; Hong Kuan Ng; Benjamin Yue Hao Tan; Dongzhi Chi

doi:10.1039/d5nr03068d

January 1, 2025NanoscaleOpen Access

Wafer-Scale Integration of Monolayer MoS₂ via Residue-Free Support Layer Etching and Angular Strain Suppression

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Key Points

The technique achieves crack-free transfer for atomically-thin 2D materials, enhancing their electronic applications.
Results highlight the significance of residue-free processes in the large-scale integration of transition metal dichalcogenides.
This approach employs angular strain suppression, providing significant advancements in the transfer of monolayer materials.
Effective integration of MoS₂ into electronic devices may lead to improved performance and functionality in future technologies.

Implication

This method demonstrates residue-free etching of MoS₂, emphasizing angular strain suppression for TMDCs integration.

Abstract

A crack-free and residue-free transfer technique for large-area, atomically-thin 2D transition metal dichalcogenides (TMDCs) such as MoS2 and WS2 is critical for their integration into next-generation electronic devices, either as...

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Cite This Study

Tong et al. (2025) studied this question.

synapsesocial.com/papers/68c183f89b7b07f3a060fe19 https://doi.org/10.1039/d5nr03068d

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Wafer-Scale Integration of Monolayer MoS₂ via Residue-Free Support Layer Etching and Angular Strain Suppression

Key Points

Implication

Abstract

Discussion

Cite This Study

Wafer-Scale Integration of Monolayer MoS₂ via Residue-Free Support Layer Etching and Angular Strain Suppression

Key Points

Implication

Abstract

Discussion

Cite This Study

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