Wafer-Scale Integration of Monolayer MoS₂ via Residue-Free Support Layer Etching and Angular Strain Suppression

Puntos clave

• The technique achieves crack-free transfer for atomically-thin 2D materials, enhancing their electronic applications.
• Results highlight the significance of residue-free processes in the large-scale integration of transition metal dichalcogenides.
• This approach employs angular strain suppression, providing significant advancements in the transfer of monolayer materials.
• Effective integration of MoS₂ into electronic devices may lead to improved performance and functionality in future technologies.