This analysis reveals the asymmetric imprint effect in hafnia-based ferroelectrics, suggesting ways to enhance FeRAM performance.
The potential of hafnia-based ferroelectric materials for Ferroelectric Random Access Memory (FeRAM) applications is limited by the imprint effect, which compromises readout reliability. Here, we systematically investigate the asymmetric imprint...
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Wu et al. (2025) studied this question.
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