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September 10, 2025Open Access

Development of a Novel Warpage Control Method for Epi-Ready 4H-SiC Wafers by Depositing Homoepitaxial Layers on both Si- and C-Faces

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The novel method effectively controls wafer bow to a target value, allowing for atomic-level surface flatness.
By applying dynamic AGE-ing, a linear decrease in bow occurs with controlled C-face growth, addressing sub-surface damage.
The approach successfully adjusted the bow from -12.0 µm to -0.4 µm on an 8-inch wafer, demonstrating significant precision.
Simultaneous etching and growth ensure both Si- and C-faces remain free of damage, highlighting a breakthrough in warpage management.

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Implication

This process precisely manages wafer bow in 4H-SiC wafers using thermal sublimation and CVD epitaxy, indicating potential for improved semiconductor manufacturing.

Cite This Study

Dojima et al. (2025) studied this question.

synapsesocial.com/papers/68c189e09b7b07f3a0613ad4 https://doi.org/10.4028/p-js5aam

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Implication

This process precisely manages wafer bow in 4H-SiC wafers using thermal sublimation and CVD epitaxy, indicating potential for improved semiconductor manufacturing.

Development of a Novel Warpage Control Method for Epi-Ready 4H-SiC Wafers by Depositing Homoepitaxial Layers on both Si- and C-Faces

Key Points

Discussion

Implication

Cite This Study

Development of a Novel Warpage Control Method for Epi-Ready 4H-SiC Wafers by Depositing Homoepitaxial Layers on both Si- and C-Faces

Key Points

Discussion

Implication

Cite This Study