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September 10, 2025Open Access

Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor

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Engineered SiC wafers demonstrate superior performance in controlling doping and thickness uniformities.
Statistical analysis of killer defects reveals significant improvements in epitaxial layers grown on engineered substrates.
Comparison of 150 mm and 200 mm SiC substrates shows notable differences in epitaxial growth characteristics.
Findings suggest engineered SiC substrates could enhance the quality of semiconductor devices in the future.

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Investigation compares engineered SiC wafers to conventional substrates, highlighting doping and defect performance.

Hens et al. (2025) studied this question.

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