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This investigation reveals how titanium nitride interlayers affect schottky barrier height and leakage in schottky diodes on n-polar gan.
This study investigates the effect of titanium nitride (TiN) interlayers on the performance of ruthenium (Ru)‐based Schottky diodes on N‐polar GaN. The Ru Schottky diodes exhibited the highest mean Schottky barrier height of 0.69 0.03 eV; however, they demonstrated a lack of uniformity in barrier height across varying device sizes. Introducing 2 and 10 nm TiN interlayers between Ru and GaN led to consistent Schottky barrier heights and leakage characteristics for all device sizes. Notably, the 2 nm TiN/40 nm Ru configuration achieved an optimal balance between the low leakage current and uniform barrier properties, highlighting the role of TiN in obtaining desirable Schottky barrier performance.
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Kayede et al. (2025) studied this question.
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