Effect of Inserting an Intervening Layer on Φb Reduction in TiN Schottky

This report describes the application of titanium nitride (TiN) with a silicon nitride (SiN) intervening layer as a Schottky electrode in a Schottky barrier diode (SBD) made of 4H-silicon carbide (SiC). This reduced the Schottky barrier height (Φ b ) to 0.74eV at room temperature, and it was confirmed that the reduction in Φ b was due not only to the application of TiN but also to the intervening layer containing SiN at the SiC/TiN interface. Furthermore, TiN with SiN was applied to a device as a Schottky electrode, and the electric field reduction effect was verified by changing the high energy implantation and JBS width. As a result, the forward voltage (V f ) was found to be reduced by a maximum of 0.23 V while suppressing leakage current. The reason for describing the interlayer as “intervening layer containing SiN” is that there may be other substances besides SiN.