Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

This is the authors' abstract. We don't add key points for this paper.

An extremely low contact resistivity of6 - 7 × 10⁻⁹\ Ω²betweenNi0.9Pt0.1Siand heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in$IV$characteristics.