BCl₃ Plasma Treatment for Enhanced Ohmic Contact Performance to p-Type 4H-SiC

Heavily p-type doped (P + ) implants are commonly used to achieve low specific contact resistance (SCR) for p-body diodes through a costly ion implantation process. Alternatively, our study proposes a single-step plasma treatment method using BCl 3 plasma. This method incorporated a high concentration of self-activated p-type boron dopants in the SiC lattice with minimal damage. Experimental I-V data from Schottky Barrier Diodes (SBDs), combined with TCAD simulation, demonstrated that approximately 40 % of boron atoms were activated in the SiC lattice (at a depth of 30-40 nm) without the need for high temperature ion implant activation. Our approach using plasma treatment realizes an SCR value ρ c of ~ 5.6×10 -5 Ω∙cm 2 , which is approximately 1 order of magnitude lower than that of untreated samples.