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September 10, 2025Open Access

Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks

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Predictive doping and thickness adjustments improved uniformity in SiC epitaxial layers, indicating enhanced efficiency and reduced costs.

Achieving doping Cpk improvements from 0.37 to over 1.67 underscores significant enhancements in doping uniformity.
Thickness Cpk improvements reached from 0.75 to 1.61 highlight the progress made in layer thickness precision.
Data analysis on cumulative coatings steered the predictive adjustments for both doping and thickness metrics across reactor campaigns.
Utilizing machine learning models for process control led to projected chip yield rates exceeding 94%, affirming overall process efficacy.

Johar et al. (2025) studied this question.

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Predictive doping and thickness adjustments improved uniformity in SiC epitaxial layers, indicating enhanced efficiency and reduced costs.