Designing Manufacturing Process for Oxide Thin‐Film Transistors Based on End‐to‐End Graph Convolutional Networks Model

Large‐area, high‐resolution organic light‐emitting diode (OLED) displays require high‐performance oxide thin‐film transistors (TFTs) with excellent mobility and stability, as well as little threshold voltage shift, especially for G8.5+ OLED production lines. Our previous work demonstrated rare‐earth doped oxides are ideal channel layer materials for TFTs due to their superior mobility and stability. However, scaling up TFT production from pilot lines to mass manufacturing poses significant challenges, largely because of the complexity of multi‐element composite materials and intricate processes. In this study, an end‐to‐end graph convolutional network (GCN) model is employed to optimize TFT production processes. By encoding process parameters as graph nodes and features, the GCN effectively predicts critical drain current–gate voltage (I–V) characteristics, enabling precise calculation of electron mobility, subthreshold slope, and threshold voltage. The model achieves a mean absolute percentage error of 19.9% on validation data. Based on the optimized parameters, a TFT device with properties including a mobility of 37.8 cm 2 /Vs, a threshold voltage of 0.9 V, and a subthreshold slope of 0.62 V/dec was successfully produced. These results highlight the potential of GCN‐based models to address the complexities of TFT mass production, providing a powerful tool for process optimization and performance enhancement.