A high mobility (29 cm 2 /Vs) and high light stability oxide thin‐film transistor (TFT) with 8 mask back channel etched (BCE) structure has been fabricated. Remarkable enhancement in negative gate‐bias thermal stress with illumination has been achieved, resulting in a threshold voltage (Vth) shift of ‐0.01 V after 1 hour. A 16.0 inch WQHD 240Hz LCD NB has been developed using high mobility and high light stability oxide TFT in G8.5.
No takes yet. Share an insight, caveat, or question.
Huang et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: