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Thickness‐Driven Transition of Switching Kinetics in Wurtzite Ferroelectrics

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A thickness-driven transition in switching kinetics is observed in AlScN films, which alters their behavior.
The switching kinetics evolve from the Kolmogorov-Avrami-Ishibashi model to nucleation-limited behavior as thickness changes.
Defects influence the switching process, particularly their inhomogeneous distribution near the interface.
These findings could lead to advancements in multi-state ferroelectric memory and neuromorphic computing architectures.

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This research demonstrates thickness-driven transitions in switching kinetics of AlScN ferroelectrics, highlighting defect interactions.

Yang et al. (2025) studied this question.

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