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September 10, 2025Physical review. B./Physical review. B16 citations

Tunneling magnetoresistance effect in altermagnets

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YSYufei SunYMYue MaoYZYu-Chen Zhuang

Key Points

  • The tunneling magnetoresistance effect shows dependence on altermagnetic orientations, influencing conductance.
  • Altermagnetism provides a new framework for exploring spintronic properties, showcasing unique symmetry relations.
  • This theoretical analysis emphasizes potential benefits for future spintronic technology advancements.
  • Research highlights the innovative design aspects of a universal altermagnetic sandwich device for improved performance.

Abstract

Altermagnetism, as a newly identified unconventional magnetic phase, has attracted great interest in condensed matter physics and provides a novel research platform for spintronics. Here, the authors theoretically study the tunneling magnetoresistance (TMR) effect and its transport properties in a universal altermagnetic sandwich device. They systematically investigate how the altermagnetic orientations affect the conductance and TMR ratio, together with the rich and intriguing underlying symmetry relations. This work introduces a new design perspective for the next-generation information and paves the way for the advancement of spintronics technologies.

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Cite This Study

Sun et al. (2025) studied this question.

synapsesocial.com/papers/68c193fb9b7b07f3a0618475https://doi.org/10.1103/t8b5-l859
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