Demonstrates enhanced tunneling magnetoresistance in altermagnetic heterostructures, indicating potential for advanced spintronic technology.
Altermagnets, which combine the advantages of ferromagnetic spin splitting and antiferromagnetic zero stray field, have been regarded as a promising platform for spintronic applications. However, it is challenging to achieve high tunneling magnetoresistance (TMR) in altermagnet-based tunnel junctions due to the momentum-dependent spin splitting. By leveraging the intrinsic spin-dependent tunneling asymmetry of altermagnetic (AM) insulators, we investigate spin-polarized transport properties in altermagnetic tunnel junctions (AMTJs) with fully altermagnetic heterostructure barriers using first-principles quantum-transport calculations. Specifically, we design and compare [110]-oriented heterostructured AMTJs composed of IrO2/CoF2/MF2/CoF2/IrO2 (M = Fe, Mn) with a homogeneous CoF2-barrier reference. Our results show that the FeF2-based heterostructure achieves giant TMR ratios of up to 196,468%, while the MnF2-based counterpart yields substantial values up to 2,322%, far exceeding the modest 14% obtained for the homogeneous CoF2 barrier system. Mechanistically, this enhancement originates from a multi-stage spin-filtering effect enabled by the heterostructured barriers, which breaks the single transport-mode constraint of homogeneous barriers through the symmetry-selective superposition of spin states. These findings highlight the potential of staggered altermagnetic heterostructures to overcome the single-mode transport limitation of conventional MTJs, providing a robust pathway toward next-generation high-performance altermagnetic spintronic devices.
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Zou et al. (2026) studied this question.
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