This research demonstrates the impact of target power ratios on TiB2 and Ta thin films' temperature coefficient of resistance, indicating potential for superior electronic performance.
Temperature coefficient of resistance (TCR) of a material is crucial for its performance and reliability in advanced electronic devices. The aim of this study is to prepare low-TCR thin films by magnetron cosputtering using two targets made of titanium diboride (TiB2) and tantalum (Ta) metal, which, respectively, have positive and negative TCR values. The power ratio of the two targets was systematically adjusted to evaluate its effect on the electrical properties and morphology of the films. We have achieved a nearly zero TCR of −4 ppm/°C with the optimal condition. The results indicate that TiB2–Ta thin films can exhibit excellent temperature stability and superior electrical properties with optimized power ratios. This work provides a valuable reference for the selection and design of materials for future high-performance electronic devices.
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Zhang et al. (2025) studied this question.
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