Finite-Size Effects on Phonon-Mediated Thermal Transport Across Si-Ge Interfaces: Spectral Analysis and Parameter Optimization for Molecular Dynamics Simulations
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Key Points
Interfacial thermal resistance decreases with increasing system length and thermal bath length, showing linear relationships.
The study provides insights into how parameter optimization can improve temperature control and thermal transport accuracy.
Spectral analysis indicates that size effects stem mainly from the transport of middle-to-low frequency phonons, important for system design.
Findings emphasize the need for careful parameter selection in simulations, offering implications for the thermal design of electronic devices.
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Implication
Simulation research reveals how system size influences interfacial thermal resistance in Si-Ge interfaces, suggesting critical parameter optimization.