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Trench filling epitaxy improves angle tolerance in 4H-SiC, suggesting chlorinated chemistry may aid growth stability.
Trench filling epitaxy on 4HSiC using trichlorosilane (HSiCl 3 ) and hydrogen chloride (HCl) has shown to improve the tolerance to trench angle misalignment relative to the substrate direction in deeper trenches than previously reported. Extraction of growth rates from crosssectional SEM shows that epilayer growth on the mesa corner facet is the most sensitive to trench misalignment, suggesting that HCl may mediate the facet growth rate within ±1.5º from to maintain symmetric growth.
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Grover et al. (2025) studied this question.
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