Performance assessment of SiC MOSFETs during quadrant operation shows recovery charge and degradation patterns.
In this paper, the performance in 3 rd quadrant operation of 3 rd and 4 th generation SiC power MOSFETs have been evaluated. These are the Gen-3 1.2 kV & 18 A Planar SiC MOSFET, Gen-3 1.2 kV & 19 A Asymmetrical Trench SiC MOSFET, Gen-4 1.2 kV & 26 A Symmetrical Double-Trench SiC MOSFET and Gen-4 1.2 kV & 19 A Trench-Assisted Planar SiC MOSFET. Further, the transients of early-stage degradation development are investigated by conducting continuous stress current thorough body diode of the aforementioned devices to explore the extent of degradation in the body diodes of SiC MOSFETs. These devices are compared to provide a better understanding of the impact of different structures.
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Liu et al. (2025) studied this question.
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