An FR4-Based Oscillator Loading an Additional High-Q Cavity for Phase Noise Reduction Using SISL Technology

An FR4-based X-band low phase noise oscillator loading an additional high-Q cavity resonator was designed in this study using substrate-integrated suspended line (SISL) technology. The additional resonator was coupled to an oscillator by the transmission line (coupling TL). The impact of the additional resonator on startup conditions, Q factor enhancement, and phase noise reduction was thoroughly investigated. Three oscillators loading an additional high-Q cavity resonator, loading an additional high-Q cavity resonator and performing partial dielectric extraction, and loading an original parallel feedback oscillator for comparison were presented. The experimental results showed that the proposed oscillator had a low phase noise of −131.79 dBc/Hz at 1 MHz offset from the carrier frequency of 10.088 GHz, and the FOM was −197.79 dBc/Hz. The phase noise was reduced by 1.66 dB through loading the additional resonator and further reduced by 1.87 dB through partially excising the substrate. To the best of our knowledge, the proposed oscillator showed the lowest phase noise and FOM compared with other all-FR4-based oscillators. The cost of fabrication was markedly reduced. The proposed oscillator also has the advantages of compact size and self-packaging properties.