Theoretical model correlates photoluminescence intensity to interfacial disorders in quantum wells, suggesting improvements for semiconductor devices.
Interfacial disorder in semiconductor quantum well (QW) determines material properties and device performance, and has drawn great research efforts using different experimental methods, yet there was not a method quantifying the lateral-length distribution of the interfacial disorders in QWs. Photoluminescence (PL) is sensitive to exciton localization, the evolutions of PL energy and linewidth with external perpendicular magnetic field have served as effective quantities for QW analysis, yet the evolution of PL intensity did not play a matchable role. We in this work develop a theoretical model correlating the PL intensity with the interfacial disorders of type-I QWs in an external perpendicular magnetic field, verify its rationality and functionality with InGa(N)As/GaAs single QWs, and derive Urbach energy and lateral-length distribution of interfacial disorders. The results show that the model makes the magnetic field-dependent PL intensity a valid probe for quantifying the interface flatness, reveals the mechanism of magnetic field-induced intensity enhancement as a joint effect of interfacial disorder-induced exciton localization and transfer of excitons from dark to bright states, and may benefit performance improvement of type-I QW materials and devices.
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Shao et al. (2025) studied this question.
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