Perovskite Quantum Dot Defect Passivation: Research Status and Future Directions

Defect passivation technology for perovskite quantum dots significantly enhances their fluorescence quantum yield and stability by suppressing surface and lattice defects. This is a critical path to overcoming the bottleneck of high color gamut and high-efficiency luminescent materials in Micro-LED displays, providing core assurance for their commercial application. Therefore, this paper analyzes the current research status and future development directions. The study adopted a literature review and analysis approach, employing strategies such as surface ligand modification (e.g., dual ligand co-passivation), ion doping (e.g., metal cation substitution), and core-shell structure design. These methods effectively suppress surface dangling bonds, halogen vacancies, and ion migration defects in perovskite quantum dots, significantly enhancing their photoluminescence quantum yield (up to over 90%) and environmental stability (humidity tolerance increased by 3-5 times). This addresses non-radiative recombination and light efficiency degradation, enabling high color gamut (>120% NTSC), narrow half-peak width (<20 nm), and excellent blue light excitation compatibility in Micro-LED displays. It provides a key material foundation for full-color, high-brightness Micro-LED devices. However, further optimization is needed for long-term stability, large-scale manufacturing, and integration compatibility. Future efforts should focus on in-situ encapsulation and dynamic defect repair mechanisms to promote industrialization.