Magnetoresistance effect based on spin-selective transport in nanodevices using chiral molecules

Mizuki Matsuzaka; Kei Kashima; Kazuhiro TERAI; Toshihiko Ueda; Ryunosuke Miyamoto; Takashi Yamamoto; Kohei Sambe; Tomoyuki Akutagawa; Hideo Kaiju

doi:10.1039/d5nr01259g

January 1, 2025NanoscaleOpen Access

Magnetoresistance effect based on spin-selective transport in nanodevices using chiral molecules

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Key Points

The magnetoresistance effect was successfully observed in nanodevices at room temperature, demonstrating significant findings.
Results indicated a chirality-induced spin selectivity mechanism in Au/N-(3S)-3,7-dimethyloctyl[1]benzothieno[3,2-b]benzothiophene-2-carboxyamide.
Observational analysis focused on the spin-selective transport properties of chiral molecules in advanced nanodevices.
These findings may enable improved functionalities in nanotechnology applications, highlighting the importance of chirality.

Implication

Observational analysis reveals a magnetoresistance effect in chiral nanodevices, suggesting spin-selective transport may advance future electronics.

Abstract

We have successfully observed the chirality-induced spin selectivity (CISS)-based magnetoresistance (MR) effect in Au/ N -(3 S )-3,7-dimethyloctyl[1]benzothieno[3,2- b ]benzothiophene-2-carboxyamide ( S -BTBT-CONHR)/Ni 78 Fe 22 nanodevices at room temperature.

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Cite This Study

Matsuzaka et al. (2025) studied this question.

synapsesocial.com/papers/68c1a13354b1d3bfb60dc69d https://doi.org/10.1039/d5nr01259g

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Magnetoresistance effect based on spin-selective transport in nanodevices using chiral molecules

Key Points

Implication

Abstract

Discussion

Cite This Study

Magnetoresistance effect based on spin-selective transport in nanodevices using chiral molecules

Key Points

Implication

Abstract

Discussion

Cite This Study

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