Numerical analysis on the thermal stress and dislocation density of a 300 mm SiC single crystal grown by the PVT method

Q: What type of study is this?

This is a Numerical Analysis study.

Sheng'ou Lu; Binjie Xu; Lingling Xuan; Anqi Wang; Chen pengyang; Fan Wang; Xiaodong Pi; Deren Yang; Xuefeng Han

doi:10.1039/d5ce00471c

January 1, 2025CrystEngComm

Numerical analysis on the thermal stress and dislocation density of a 300 mm SiC single crystal grown by the PVT method

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Key Points

Thermal stress in SiC single crystals was analyzed, affecting crystal quality and performance.
Dislocation density measurements highlight structural integrity issues in larger crystals.
The PVT method proves effective in facilitating the growth of larger SiC single crystals.
This analysis underscores critical factors in crystal growth, influencing future manufacturing techniques.

Implication

Numerical analysis reveals thermal stress effects and dislocation density in SiC single crystals, indicating advancements in crystal growth technology.

Abstract

The expansion of the diameter of a SiC single crystal to 300 mm represents a significant milestone in the technological development of SiC crystal growth. However, growing a 300-mm SiC...

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Cite This Study

Lu et al. (2025) studied this question.

synapsesocial.com/papers/68c1a26954b1d3bfb60dd890 https://doi.org/10.1039/d5ce00471c

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Numerical analysis on the thermal stress and dislocation density of a 300 mm SiC single crystal grown by the PVT method

Key Points

Implication

Abstract

Discussion

Cite This Study

Numerical analysis on the thermal stress and dislocation density of a 300 mm SiC single crystal grown by the PVT method

Key Points

Implication

Abstract

Discussion

Cite This Study

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