Experimental study on tilt and dose dependence and a proposal for a simplified model for simulation in magnesium channeled implantation into GaN (0001)

Channeled implantation of magnesium (Mg) ions into gallium nitride (GaN) enables deep implantation with a low implant energy. This study evaluates the effects of Mg dose and tilt angle on the Mg depth profiles using secondary ion mass spectrometry (SIMS). For higher doses, a reduction of channeling effect due to the accumulation of lattice disorder was observed. We propose a simplified model by placing a thin “imaginary” amorphous layer on the surface in MARLOWE simulations, which successfully reproduced the Mg depth profiles. A tilt angle less than 0.5° had no significant effect on channeling and the MARLOWE simulations reproduced its dependence of the Mg depth profiles.