Investigation reveals aluminum oxide passivation enhances performance and stability in In2O3 thin-film transistors, suggesting critical thickness impacts functionality.
Solution-processed amorphous indium oxide (In2O3) channels demonstrate promising potential for thin-film transistor (TFT) applications, but environmental instability remains a critical challenge. This study systematically investigates plasma-enhanced atomic layer deposition-grown aluminum oxide (Al2O3) passivation layers (5/15/20 nm) and low-temperature solution-processed amorphous In2O3 for the optimization of performance and stability in n-type In2O3 TFTs. Contrary to pristine In2O3 TFTs, the results show the passivation effect exhibits significant thickness dependence and reveal a critical 5-nm threshold for effective device enhancement including a highest saturation electron mobility and a lower threshold voltage, and a favorable long-term stability. Moreover, in order to explore the cases of enhancement, the interface defect was investigated. The improvement is partially attributed to the reduction of interfacial defects through the protective effect of Al2O3 passivation layer in blocking environmental molecules and light exposure, which makes it suitable for the low-power and flexible applications.
No takes yet. Share an insight, caveat, or question.
Xu et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: