Quantitative Probing of Polarization-Driven Carrier Density Reconfiguration in FeFETs

Quantitative understanding of polarization-induced carrier modulation at the nanoscale is crucial for optimizing ferroelectric field-effect transistors (FeFETs). Here, we integrate scanning microwave impedance microscopy (sMIM), piezoresponse force microscopy (PFM), and numerical modeling to quantitatively map ferroelectric domains and carrier distributions in MoS2/PZT-based FeFETs. We observe that polarization switching induces a two-order-of-magnitude change in carrier density (1011 to 1013 cm-2), which strongly influences the device's on/off behavior. Numerical reconstruction further reveals spatially heterogeneous carrier modulation governed by ferroelectric switching. This methodology provides a robust platform for probing polarization-carrier interactions in nanoscale, beneficial to future FeFETs optimization.