High-Performance Lateral Enhancement-Mode β-Ga₂O₃ MOSFET with a Novel Superjunction-Extended Gate Structure

To improve the conduction performance of the lateral enhancement-mode β-Ga 2 O 3 MOSFETs, a novel superjunction-extended gate structure was proposed, leveraging the enhanced gate-induced electron-accumulation effect. This concept was validated and optimized using TCAD simulations. Specifically, a lightly doped thin-channel design was implemented to ensure high-voltage operation and stable enhancement-mode functionality. Furthermore, the device performance is significantly improved by fine-tuning critical structural parameters such as channel doping concentration, extended gate thickness, and channel length. Simulation results demonstrate that within a breakdown voltage range of 2.5–6.8 kV, the device achieves a power figure of merit exceeding 12 GW/cm 2 , with a peak value of 15.40 GW/cm 2 . Additionally, the specific on-resistance remains below 3.5 mΩ·cm 2 , and the maximum output current reaches 1.77 × 10 4 A/cm 2 . These performance metrics outperform those of similar devices, providing an efficient, low-loss solution for high-voltage power applications.