Beta radiation effects on characteristics of some photodiodes

Optoelectronics is an exciting field that merges electronics with optics. Devices in this domain have diverse applications, including telecommunications, defense, healthcare, and automation systems. These devices are capable of converting light energy into electrical energy when exposed to light. This paper studies I-V characteristics (current dependence on voltage) of Si PIN photodiodes [BP104] and [BPW34] exposed to beta irradiation in order to determined their viability in a radiation environment. Investigating the variations of these characteristics of diodes such as output current, the maximum current and the maximum power, all due to the exposure of the simulation of solar light systems. The I-V characteristics of these devices have been measured before and after being exposed to beta irradiation (0,10,20 and 30 mGy) from source (90Sr). The results show that the maximum power (Pmax) was decreased at high value of beta irradiation 20 and 30 mGy dosage. Beta irradiation damage would decrease lifetime of the charge carriers, then would retreating of Jmax. For [BPW34] photodiode the value of Jmax changed from 74.66 to 16.61mA/cm2 when beta dose changed from 0mGy to 30mGy under beta irradiation at illumination scale 1.175mW/cm2 .