Radiation Resilience of β-Ga₂O₃ Schottky Barrier Diodes Under High Dose Gamma Radiation

A systematic investigation of the electrical characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs) has been conducted under high dose ⁶⁰Co gamma radiation up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad (Si) resulted in a significant decrease in on-current by ~78% and an increase in on-resistance from ~3 mΩ ·cm² to ~14 mΩ ·cm² compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher doses of gamma radiation (3 and 5 Mrad (Si)) over a prolonged duration, the device performance partially recovered due to a radiation annealing effect. This effect is facilitated by secondary electrons generated through Compton scattering, which dissipate kinetic energy as heat throughout the lattice, thereby annealing the trapping centers responsible for device performance degradation. The capacitance-voltage (C-V) characterization revealed that the net carrier concentration in the β-Ga₂O₃ drift layer reduced from ~3.19 × 10¹⁶ cm⁻³ to ~3.05 × 10¹⁶ cm⁻³ after 5 Mrad (Si) irradiation. Temperature-dependent I-V characteristics showed that irradiation leads to a reduction in both forward and reverse current across all investigated temperatures ranging from 25 to 250^∘C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. The reverse breakdown characteristics of the β-Ga₂O₃ SBDs showed a slight increase of the breakdown voltage after radiation. Overall, β-Ga₂O₃ Schottky diode exhibits high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environments.