Analysis reveals high carrier lifetimes and low concentrations in InGa0.2AsSb0.27 alloys, suggesting potential for mid-wave infrared applications.
This study presents the molecular beam epitaxy growth of the indium-rich InGa0.2AsSb0.27 alloy with a 0.26 eV bandgap, lattice-matched (LM) to GaSb. A significant finding is the high material metrics, particularly the minority carrier lifetime (0.3 μs) and the background carrier concentration (8 × 1015 cm−3), in which the product reaches half the value of the reference InAsSb0.09 alloy. This indicates the suitability of indium-rich InGaxAsSby alloys LM to GaSb for low-dark-current, high-quantum-efficiency detectors for the entire mid-wave infrared wavelength range.
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Zhao et al. (2025) studied this question.
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