Frequency multiplier utilizing negative capacitance tunnel field-effect transistor with dual backgates

In this study, we propose a frequency multiplier using NCTFET devices with double backgates. The backgate bias is used to adjust the source-to-channel and channel-to-drain tunnel generation rates to make the device bipolar current symmetric for designing a frequency doubler. The ferroelectric material of gate oxide increased the device conduction current by 75.5% and reduced the subthreshold swing to 54.04 mV/decade. The frequency multiplier designed by it has a 98.8% increase in output signal amplitude compared to traditional TFET frequency multipliers. In addition, in the frequency doubler circuit, the NCTFET operates in the ON state for a long time, generating a large amount of thermal power consumption. It can be concluded that the increase in temperature will increase the device drain current, but the output signal amplitude of the frequency doubler will gradually increase. However, when the temperature is greater than 600 K, due to the increase in leakage current, the output signal of the frequency doubler will be distorted.