Epitaxial integration of perovskite based double-gate field effect transistor with silicon

Silicon-based semiconductors have driven significant advancements following Moore’s law but are now approaching the physical limits. To overcome these challenges, integrating new materials with silicon is emerging as a promising alternative. In this work, we demonstrate the integration and operation of perovskite-oxide-based double-gated field effect transistors (FETs) on silicon. This was done by first growing an epitaxial SrTiO3 buffer layer on silicon using hybrid molecular beam epitaxy and then depositing epitaxial perovskite layers on top of SrTiO3 using pulsed laser deposition. Upon confirming epitaxial growth of SrHfO3 and BaSnO3 on a SrTiO3 buffer layer on silicon, we demonstrate the successful operation of a double-gate FET. As multi-gate has become an essential structure in semiconductor technology, our epitaxial double-gate FET, combined on silicon, displays performance improvements when it evolves from a single bottom gate to a double-gate design. Our work demonstrates a path toward integration of novel perovskite oxides on silicon.