Simulation results reveal enhanced drain current and subthreshold swing sensitivity in TFET biosensors, indicating strong biomolecule detection capabilities.
In this paper, a dielectric-modulated buried source horizontally double-gate TFET-based (DM-BSHDG TFET) biosensors is proposed for detection of biomolecules. The channel partially encloses the buried source, and the drain half surrounds the channel. Horizontally double gate is located above the source and channel. The performance of the DM-BDSTG TFET-based biosensors was evaluated by two-dimensional simulation of TCAD (ATLAS). Biomolecules can be distinguished due to the dielectric constants of different biomolecules placed in the cavity and will lead to different transfer characteristics of the device. The results show that the drain current sensitivity can reach 1.41 × 1010 when the gate-source voltage is 2 V. In addition, the subthreshold swing sensitivity can reach 0.9. Therefore, the DM-BSHDG TFET-based biosensors can provide excellent detection and recognition capabilities.
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Yang et al. (2025) studied this question.
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