Comparative analysis on nitride-based high electron mobility transistor (HEMT)

This paper explores a comparative analysis on different types of High Electron Mobility Transistors (HEMTs), in particular the significant role of oxide layers in enhancing the performance of metal-oxide-semiconductor (MOS)-HEMTs compared to both passivated and unpassivated HEMTs, particularly in high-frequency and low-noise telecommunication applications. The study focuses on oxide materials as effective passivation layers that improve device performance by reducing gate leakage currents, minimizing surface states, and enhancing the interface quality. The integration of these oxide layers leads to higher breakdown voltage, lower noise levels, and improved reliability, making them vital for high-power applications. Through detailed analysis and experimental data, the paper underscores the importance of oxide passivation, highlighting its crucial role in advancing HEMTs for modern telecommunication technologies. These improvements enable clearer signal transmission and robust performance in demanding environments.