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April 18, 2024Deleted JournalOpen Access

GaN-HEMT Performance Enhancement

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Authors

FMFatma Mahmoud

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Overview

Device simulation reveals enhanced frequency and current performance in AlGaN/GaN-MOSHEMTs, indicating strong potential for high-frequency power electronics.

Key Points

  • Drain current and transconductance improve significantly in AlGaN/GaN-MOSHEMT devices, driven by enhanced two-dimensional electron gas density across scaled gate dimensions.
  • Cut-off frequency reaches 45.7 GHz at 100-nm gate length, while higher drain current is maintained without introducing acceptor-like interface traps in the device.
  • Device simulations using Sentaurus technology computer-aided design optimize layer thickness and gate dimensions, highlighting strong utility for high-frequency power electronics.

Cite This Study

Fatma Mahmoud (2024) studied this question.

synapsesocial.com/papers/68e6e99bb6db64358766475fhttps://doi.org/10.52783/jes.1442
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  5. 5Electrical Analysis of an Enhanced Stepped Hybrid Buffer HEMT with AlGaN/p-GaN/AlGaN Dual Heterojunctions2024