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April 23, 2024

Enhancing Drain Current Performance of AlGaN/GaN HEMT through Graded AlGaN Barrier

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Authors

MKMurugan KeerthiJPJ. Charles PravinBMB. Mohan

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Keerthi et al. (2024) studied this question.

synapsesocial.com/papers/68e6e0a4b6db64358765c8a4https://doi.org/10.1109/icdcs59278.2024.10560656
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions2019 · 6 citations
  2. 2Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts2011 · 18 citations
  3. 3Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review2022 · 152 citations