Enhancing Drain Current Performance of AlGaN/GaN HEMT through Graded AlGaN Barrier

Aluminum Gallium Nitride (AlGaN)/Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) have attracted a lot of attention due to their potential for high-frequency and high-power applications. This paper presents a novel structure for AlGaN/GaN HEMTs with an improved drain current performance achieved through a graded AlGaN barrier. The proposed structure exhibits a drain current of 3.2A, a substantial enhancement of 77 percentage as compared to the 1.8A obtained from conventional GaN HEMTs.To improve electron transport properties, step gradients of aluminum mole fraction (x) are used in the construction of the graded AlGaN barrier. Simulation studies, taking into account significant parameters like gate and drain lengths <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Lg,Ld)</tex> , source-gate length <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Lsg)</tex> , and gate-drain length <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Lg,Ld)</tex> , show improved device performance in comparison to traditional HEMTs with a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Rₒₙ</tex> value of 0.0021.The simulated results which includes the drain current, electron mobility and transconductance confirms the efficacy of the proposed structure contributing to enhanced device performance.