Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Study on a p-GaN HEMT with composite passivation and composite barrier layers2024 · 4 citations
2. 2Enhancing Drain Current Performance of AlGaN/GaN HEMT through Graded AlGaN Barrier2024 · 4 citations
3. 3Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer2024 · 10 citations
4. 4Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications2026
5. 5Effect of Al Composition in AlxGa1 – xN Barrier on Performance of Gate Field-Plate GaN HEMTs on SiC Substrates2026