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The research aims to compare the performance of p-GaN-gate HEMTs utilizing AlGaN and InGaN back barriers.

Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications

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The research aims to compare the performance of p-GaN-gate HEMTs utilizing AlGaN and InGaN back barriers.
Investigated static and dynamic behaviors of HEMTs with different back barrier compositions.
Designed devices with identical geometries and a gate length of 1.2 μm.
Measured output current and transconductance under high-bias conditions.
InGaN back barrier HEMT achieved peak output current of 0.82 A/mm and transconductance of 0.50 mS/mm.
AlGaN back barrier showed lower output current of 0.60 A/mm and transconductance of 0.40 mS/mm.
InGaN device reached a higher cutoff frequency of 75 GHz compared to 61 GHz for AlGaN.
InGaN HEMT demonstrated a substantial breakdown voltage of 436 V, while AlGaN achieved 543 V.

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Comparative analysis reveals InGaN back barrier HEMTs outperform AlGaN in RF power applications, suggesting advantages for high-frequency use.

Gowtham et al. (2026) studied this question.

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Comparative analysis reveals InGaN back barrier HEMTs outperform AlGaN in RF power applications, suggesting advantages for high-frequency use.