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June 14, 2026Semiconductors

Performance Analysis of AlGaN/GaN HEMTs with InGaN and Graded InGaN Back-Barrier Structures

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Authors

BNBathlin Nelmin NRSR. S. ShajiERE. Rajasherin

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Overview

Randomized trial analyzes enhanced characteristics of HEMTs with innovative back-barrier structures, indicating improved performance.

Key Points

  • This work aims to evaluate the performance of Al0.35Ga0.65N/GaN HEMTs using different InGaN back-barrier structures.
  • Used TCAD simulations to account for polarization effects and composition-dependent parameters.
  • Evaluated advanced carrier transport, trap dynamics, and self-heating models.
  • Compared uniform InGaN and graded InGaN back-barrier structures.
  • Graded InGaN back-barrier structure resulted in a drain current of ~3.7 A/mm and peak transconductance of ~1.5 S/mm.
  • Achieved a cut-off frequency of ~180 GHz, showing nearly 20% enhancement in RF performance.
  • Observations included a subthreshold slope of 24.3 mV/dec and improved breakdown voltage of ~54 V.

Cite This Study

N et al. (2026) studied this question.

synapsesocial.com/papers/6a2e456cb1cc60ccdea8a7ffhttps://doi.org/10.1134/s1063782626600579
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