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September 16, 2024MicromachinesOpen Access

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

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JXJuan XiongXXXintong XieJWJie Wei

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Xiong et al. (2024) studied this question.

synapsesocial.com/papers/68e58481b6db6435875217ebhttps://doi.org/10.3390/mi15091158
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  1. 1Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage2024 · 17 citations
  2. 2Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study2024 · 3 citations
  3. 3Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer2024 · 24 citations
  4. 4Study on a p-GaN HEMT with composite passivation and composite barrier layers2024 · 4 citations
  5. 5Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate2024 · 9 citations