Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer2024 · 10 citations
2. 2Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study2024 · 3 citations
3. 3Characteristics of transport properties in double-barrier AlGaN/GaN HEMT with ultra-high density 2DEG and high breakdown voltage2026
4. 4Study on a p-GaN HEMT with composite passivation and composite barrier layers2024 · 4 citations
5. 5Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability2026 · 1 citations