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May 24, 2026Journal of Applied Physics

Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability

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Authors

JYJingjing YuJYJie YangQZQian Zheng

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Overview

Randomized trial demonstrates enhanced breakdown capabilities in p-GaN gate HEMTs, suggesting improved robustness for power devices.

Key Points

  • This work aims to develop a semiconducting p-GaN gate HEMT that exhibits non-destructive avalanche breakdown characteristics.
  • Demonstrated a semiconducting p-GaN gate HEMT with a thin p-GaN layer covering the AlGaN layer.
  • The device was tested for breakdown capabilities under high drain stress conditions.
  • Evaluated the performance in terms of breakdown voltage and current degradation post-repetitive tests.
  • Achieved a non-destructive breakdown voltage of approximately 483 V with an SG length of 9 μm.
  • Showed no current degradation after ten cycles of repetitive breakdown tests.
  • Obtained a dynamic RON/static RON ratio of 1.09 after 400 V stress.

Cite This Study

Yu et al. (2026) studied this question.

synapsesocial.com/papers/6a1296d548a0ea1665673fe3https://doi.org/10.1063/5.0319233
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