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March 25, 2024Journal of Physics D Applied Physics

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

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Authors

MJMao JiaBHBin HouLYLing Yang

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Jia et al. (2024) studied this question.

synapsesocial.com/papers/68e72758b6db6435876a0b2fhttps://doi.org/10.1088/1361-6463/ad3764
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  5. 5Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer2024 · 10 citations